Part Number Hot Search : 
FQI4N90 K3366 37211 101MC 1N5643 DS1236A EVPAF PBH14036
Product Description
Full Text Search

MRF6S19100H - RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs

MRF6S19100H_549056.PDF Datasheet

 
Part No. MRF6S19100H MRF6S19100HR3 MRF6S19100HR306 MRF6S19100HSR3
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs

File Size 420.58K  /  12 Page  

Maker


Freescale Semiconductor, Inc
MOTOROLA



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: MRF6S19100H
Maker: N/A
Pack: N/A
Stock: 103
Unit price for :
    50: $38.40
  100: $36.48
1000: $34.56

Email: oulindz@gmail.com

Contact us

Homepage http://www.freescale.com
Download [ ]
[ MRF6S19100H MRF6S19100HR3 MRF6S19100HR306 MRF6S19100HSR3 Datasheet PDF Downlaod from Datasheet.HK ]
[MRF6S19100H MRF6S19100HR3 MRF6S19100HR306 MRF6S19100HSR3 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for MRF6S19100H ]

[ Price & Availability of MRF6S19100H by FindChips.com ]

 Full text search : RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs


 Related Part Number
PART Description Maker
IRFF120 IRFF121 IRFF122 IRFF123 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
General Electric Solid State
GE Solid State
SSM3J02F 600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
MAPLST1617-030CF RF Power Field Effect Transistor
Tyco Electronics
MTP2N80 Power Field Effect Transistor
New Jersey Semi-Conductor P...
MTD1N40 POWER FIELD EFFECT TRANSISTOR
Motorola, Inc
MRF5S21045 MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045 RF Power Field Effect Transistors
FREESCALE[Freescale Semiconductor, Inc]
MRF8S7120NR3 RF Power Field Effect Transistor
Motorola
VN30ABA VN35ABA Field Effect Power Transistor
General Electric Solid State
MRF282 MRF282ZR1 MRF282SR1 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
MRF5S9101MBR1 MRF5S9101NBR1 MRF5S9101NR1 RF Power Field Effect Transistors
Freescale (Motorola)
 
 Related keyword From Full Text Search System
MRF6S19100H MARKING MRF6S19100H size MRF6S19100H asm encoder MRF6S19100H schottky MRF6S19100H wire
MRF6S19100H Bit MRF6S19100H IC DATA SHET MRF6S19100H temperature MRF6S19100H eeprom pdf MRF6S19100H terminals description
 

 

Price & Availability of MRF6S19100H

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.57338404655457