PART |
Description |
Maker |
IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
|
General Electric Solid State GE Solid State
|
SSM3J02F |
600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
|
MAPLST1617-030CF |
RF Power Field Effect Transistor
|
Tyco Electronics
|
MTP2N80 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
|
MTD1N40 |
POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc
|
MRF5S21045 MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045 |
RF Power Field Effect Transistors
|
FREESCALE[Freescale Semiconductor, Inc]
|
MRF8S7120NR3 |
RF Power Field Effect Transistor
|
Motorola
|
VN30ABA VN35ABA |
Field Effect Power Transistor
|
General Electric Solid State
|
MRF282 MRF282ZR1 MRF282SR1 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
MRF5S9101MBR1 MRF5S9101NBR1 MRF5S9101NR1 |
RF Power Field Effect Transistors
|
Freescale (Motorola)
|